In the first big flash storage news of 2019, Samsung announced that they have begun mass producing the 1TB Samsung eUFS chip for use in the next-generation mobile devices.
Here are the full details, including its performance specifications!
Updated @ 2019-01-31 : Added additional information, and a new picture.
Originally posted @ 2019-01-30
The 1TB Samsung eUFS Chip
The new 1TB Samsung eUFS chip is the world’s first embedded Universal Flash Storage 2.1 (eUFS 2.1) device to break the terabyte threshold. It is powered by their fifth-generation V-NAND memory, and a new proprietary controller.
The 1TB Samsung eUFS chip offers twice the storage capacity of its predecessor in the same package size (11.5 mm x 13.0 mm), by stacking 16 layers of Samsung’s 512 Gb V-NAND flash memory.
The 1TB storage capacity will allow you to record approximately 43 hours of 4K videos, or 67,000 photos from a 48 MP camera. Your entire life can literally be stored in this one chip!
Higher Performance
In addition to doubling single-chip storage capacity, the 1TB Samsung eUFS chip is significantly faster. With a read speed of up to 1 GB/s, it is about twice as fast as solid state drives used in high-end laptops!
Samsung also improved its random read and write speeds by 38% and 25% respectively over its 512 GB predecessor. This means it is approximately 500X faster than a typical microSD card!
| Memory | Sequential Read Speed |
Sequential Write Speed | Random Read Speed |
Random Write Speed |
| 1TB Samsung eUFS 2.1 (Jan. 2019) |
1000 MB/s | 260 MB/s | 58,000 IOPS | 50,000 IOPS |
| 512GB Samsung eUFS 2.1 (Nov. 2017) |
860 MB/s | 255 MB/s | 42,000 IOPS | 40,000 IOPS |
| Samsung eUFS 2.1 for automotive (Sept. 2017) |
850 MB/s | 150 MB/s | 45,000 IOPS | 32,000 IOPS |
| 256GB Samsung UFS Card (July 2016) |
530 MB/s | 170 MB/s | 40,000 IOPS | 35,000 IOPS |
| 256GB Samsung eUFS 2.0 (Feb. 2016) |
850 MB/s | 260 MB/s | 45,000 IOPS | 40,000 IOPS |
| 128GB Samsung eUFS 2.0 (Jan. 2015) |
350 MB/s | 150 MB/s | 19,000 IOPS | 14,000 IOPS |
| eMMC 5.1 | 250 MB/s | 125 MB/s | 11,000 IOPS | 13,000 IOPS |
| eMMC 5.0 | 250 MB/s | 90 MB/s | 7,000 IOPS | 13,000 IOPS |
| eMMC 4.5 | 140 MB/s | 50 MB/s | 7,000 IOPS | 2,000 IOPS |
Such high performance is important for flagship smartphones, because it allows them to support high-speed photography and video recording at 960 frames per second or faster!
1TB Samsung eUFS Availability
Samsung has already begun mass-producing the 1TB Samsung eUFS chip. We should see devices using this new storage chip this year.
In fact, they anticipate strong demand for the chip in 2019, and plan to expand the production of their 5th generation 512 Gb V-NAND memory at their Pyeongtaek plant in the first half of 2019, to meet this demand.
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