Memory DQ Drive Strength
Common Options : Not Reduced, Reduced 15%, Reduced 30%, Reduced 50%
Memory DQ Drive Strength : A Quick Review
The Memory DQ Drive Strength BIOS feature allows you to reduce the drive strength for the memory DQ (data) pins.
But it does not allow you to increase the drive strength because it has already been set to use the maximum drive strength by default.
When set to Not Reduced, the DQ drive strength will remain at full strength.
When set to Reduced 15%, the DQ drive strength will be reduced by approximately 15%.
When set to Reduced 30%, the DQ drive strength will be reduced by approximately 30%.
When set to Reduced 50%, the DQ drive strength will be reduced by approximately 50%.
Generally, you should keep the memory data pins at full strength if you have multiple memory modules. The greater the DRAM load, the more memory drive strength you need.
But no matter how many modules you use, AMD recommends that you set this BIOS feature to Not Reduced if you are using a CG or D revision Athlon 64 or Opteron processor.
However, if you are only using a single memory module, you can reduce the DQ drive strength to improve signal quality and possibly achieve higher memory clock speeds.
If you hit a snag in overclocking your memory modules, you can also try reducing the DQ drive strength to achieve higher clock speeds, even if you are using multiple memory modules.
AMD recommends that you reduce the DQ drive strength for Revision E Athlon 64 and Opteron processors. For example, the DQ drive strength should be reduced by 50% if you are using a Revision E Athlon 64 or Opteron processor with memory modules based on the Samsung 512 Mbits TCCD SDRAM chip.
Memory DQ Drive Strength : The Full Details
Every Dual Inline Memory Module (DIMM) has 64 data (DQ) lines. These lines transfer data from the DRAM chips to the memory controller and vice versa.
No matter what kind of DRAM chips are used (whether it’s regular SDRAM, DDR SDRAM or DDR2 SDRAM), the 64 data lines allow it to transfer 64-bits of data every clock cycle.
Each DIMM also has a number of data strobe (DQS) lines. These serve to time the data transfers on the DQ lines. The number of DQS lines depends on the type of memory chip used.
DIMMs based on x4 DRAM chips have 16 DQS lines, while DIMMs using x8 DRAM chips have 8 DQS lines and DIMMs with x16 DRAM chips have only 4 DQS lines.
Memory data transfers begin with the memory controller sending its commands to the DIMM. If data is to be read from the DIMM, then DRAM chips on the DIMM will drive their DQ and DQS (data strobe) lines.
On the other hand, if data is to be written to the DIMM, the memory controller will drive its DQ and DQS lines instead.
If many output buffers (on either the DIMMs or the memory controller) drive their DQ lines simultaneously, they can cause a drop in the signal level with a momentary raise in the relative ground voltage.
This reduces the quality of the signal which can be problematic at high clock speeds. Increasing the drive strength of the DQ pins can help give it a higher voltage swing, improving the signal quality.
However, it is important to increase the DQ drive strength according to the DRAM load. Unnecessarily increasing the DQ drive strength can cause the signal to overshoot its rising and falling edges, as well as create more signal reflection.
All this increase signal noise, which ironically negates the increased signal strength provided by a higher drive strength. Therefore, it is sometimes useful to reduce the DQ drive strength.
With light DRAM loads, you can reduce the DQ drive strength to lower signal noise and improve the signal-noise ratio. Doing so will also reduce power consumption, although that is probably low on most people’s list of importance. In certain cases, it actually allows you to achieve a higher memory clock speed.
This is where the Memory DQ Drive Strength BIOS feature comes in. It allows you to reduce the drive strength for the memory data pins.
But it does not allow you to increase the drive strength because it has already been set to use the maximum drive strength by default.
When set to Not Reduced, the DQ drive strength will remain at full strength.
When set to Reduced 15%, the DQ drive strength will be reduced by approximately 15%.
When set to Reduced 30%, the DQ drive strength will be reduced by approximately 30%.
When set to Reduced 50%, the DQ drive strength will be reduced by approximately 50%.
Generally, you should keep the memory data pins at full strength if you have multiple memory modules. The greater the DRAM load, the more memory drive strength you need.
But no matter how many modules you use, AMD recommends that you set this BIOS feature to Not Reduced if you are using a CG or D revision Athlon 64 or Opteron processor.
However, if you are only using a single memory module, you can reduce the DQ drive strength to improve signal quality and possibly achieve higher memory clock speeds.
If you hit a snag in overclocking your memory modules, you can also try reducing the DQ drive strength to achieve higher clock speeds, even if you are using multiple memory modules.
AMD recommends that you reduce the DQ drive strength for Revision E Athlon 64 and Opteron processors. For example, the DQ drive strength should be reduced by 50% if you are using a Revision E Athlon 64 or Opteron processor with memory modules based on the Samsung 512 Mbits TCCD SDRAM chip.
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